In many ways the Silicon Controlled Rectifier, SCR or just Thyristor as it is more commonly known, is similar in construction to the transistor. APPARATUS REQUIRED: SL. Experiment No: 2 Experiment Name: Study of V- I Characteristics of TRIAC. Apparatus Required: 1. Aim: To study the V-I characteristics of SCR. An ohmmeter is an instrument that measures electrical resistance. NV6532 TRIAC Characteristic Trainer 2. NV6530 SCR Characteristic Trainer 2. The experiments were developed to NV6532 TRIAC Characteristic Trainer 2. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. The anode current must be more than a value known as latching current in order to maintain the device in the ON state. Apparatus 1. Connect the negative lead of your ohmmeter to the anode of the SCR and the positive lead to the cathode of the SCR. Aim: To study the V-I characteristics of TRIAC. Apparatus Required: 1. This board is useful for students to study and understand operation of SCR circuit and plot the V-I characteristics of SCR for different constant values of gate current. 2mm Patch cords. Two AVO meter 4. If you are looking for some easy security solutions, you get it here in the form of touch triggered and anti-theft alarm circuits, in case your house water is over flowing, you may make the SCR controlled water level alarm and get rid of the problem, … Dual channel Oscilloscope 3. 1. REVIEW: A Silicon-Controlled Rectifier, or SCR, is essentially a Shockley diode with an extra terminal added. Note down the anode current (I A) just before it drops to zero, which will be I H. Reverse the anode voltage polarity. Apparatus Required: 1. Connection(Block d of M07) 1. increased to break-over value, the junction j2 breaks down and device starts conducting. 2mm Patch cords. Find the SCR forward resistance using the graph. Connect between V1 terminal of Variable Power on the left of M07 board and V+ terminal of Block d with red line, and between COM terminal and the earthing terminal with black line. 2. Vary V AK in steps of 5V till 25V and note down V AK and I A values at each step Plot forward and reverse characteristics using the above-tabulated values. The operating voltage-current I-V characteristics curves for the operation of a Silicon Controlled Rectifier are given as: Thyristor I-V Characteristics Curves Once the thyristor has been turned “ON” and is passing current in the forward direction (anode positive), the gate signal looses all control due to the regenerative latching action of the two internal transistors. Viva questions: 1. If it reads a very low value, then the SCR is shorted and should be replaced. This extra terminal is called the gate, and it is used to trigger the device into conduction (latch it) by the application of a small voltage. ECE 311 – Electronics I iii July 2011 Notes about the Course Electronics I consists of a theoretical module ECE 320 and a practical module ECE 311. Thyristor Tutorial. Nvis 6530A Understanding Characteristics of DIAC, TRIAC & SCR is remarkable and frequently used laboratory equipment which is designed to explain fundamentals and working of DIAC, TRIAC & SCR. Circuit Diagram: Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V AK and turned off using power circuit i.e., turn on is controlled … Once SCR starts conducting, it behaves like a conducting diode and … These courses run concurrently and the aim of the manual is to introduce students to laboratory procedure including data recording and report writing. When the gate current is increased, the breakover voltage values will be reduced. If SCR switches off. Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an … CONTENTS First Cycle Experiments Exp.No Title of the Experiment Page No 1 Static Characteristics of Silicon Controlled Rectifier 02 2 Static Characteristics of IGBT 08 3 Static Characteristics of MOSFET 12 4 SCR triggering circuit using Synchronized UJT Relaxation Oscillator 16 5

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